Search Results for "FF150R12ME3G"
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FF150R12ME3G
Infineon
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Datasheet
MODULE-11
Not Recommended
Package/Case:
Module
Collector Emitter Saturation Voltage:
1.7V
Collector-emitter Voltage-Max:
1.2kV
Max Collector Current:
200A
FF150R12ME3GBOSA1
Infineon
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Datasheet
MODULE-11
Not Recommended
Max Operating Temperature:
150
Number of Terminals:
11
Terminal Position:
UPPER
Pin Count:
11
