Infineon
FF150R12ME3G
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
PackageModule
MountingScrew
Power695W
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Technical Specifications
Infineon FF150R12ME3G technical specifications.
General
Package/Case
Module
Collector Emitter Saturation Voltage
1.7V
Collector-emitter Voltage-Max
1.2kV
Max Collector Current
200A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Mount
Screw
Package Quantity
12
Power Dissipation
695W
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF150R12ME3G Datasheet
Download the complete datasheet for Infineon FF150R12ME3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.