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FF300R17ME4

Infineon

Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Datasheet

FLANGE MOUNT, R-XUFM-X11

Active

Max Operating Temperature: 175

Number of Terminals: 11

Terminal Position: UPPER

Pin Count: 11

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FF300R17ME4BOSA1

Infineon

Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Datasheet

FLANGE MOUNT, R-XUFM-X11

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Saturation Voltage: 1.95V

Collector-emitter Voltage-Max: 2.3V

FF300R17ME4PBPSA1

Infineon

Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Datasheet

FLANGE MOUNT, R-XUFM-X11

Active

Max Operating Temperature: 175

Number of Terminals: 11

Terminal Position: UPPER

Number of Elements: 2

FF300R17ME4PB11BPSA1

Infineon

Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Datasheet

FLANGE MOUNT, R-XUFM-X11

Active

Max Operating Temperature: 175

Number of Terminals: 11

Terminal Position: UPPER

Number of Elements: 2

FF300R17ME4_B11

Infineon

Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Datasheet

FLANGE MOUNT, R-XUFM-X11

Active

Number of Terminals: 11

Terminal Position: UPPER

Pin Count: 11

Number of Elements: 2

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