Cap Aluminum Polymer 1000uF 25VDC 20% (10 X 21mm) Radial 5mm 0.024 Ohm 1830mA 2000h 125°C Bag
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IU, 4 PIN
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE MK, 2 PIN
FET, P Channel, ID 6 A
6-Pin IU Package RF Transistor
FET, P Channel, ID 48 A
FET, P Channel, ID 0.45 A
