RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3