Search Results for &quot; FQB17P10TM &quot;

P-CHANNEL MOSFET TO-263-3 16.5A 100V 100ns 30V

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 16.5A

Current Rating: -16.5A

Drain to Source Breakdown Voltage: -100V

Fairchild

Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

FQB12P10TM

P-CHANNEL MOSFET, -100V, 11.5A, 75W, TO-263-3

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 11.5A

Current Rating: -11.5A

Drain to Source Breakdown Voltage: -100V

Search Results for "FQB17P10TM"

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P-CHANNEL MOSFET TO-263-3 16.5A 100V 100ns 30V

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 16.5A

Current Rating: -16.5A

Drain to Source Breakdown Voltage: -100V

Fairchild

Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

FQB12P10TM

P-CHANNEL MOSFET, -100V, 11.5A, 75W, TO-263-3