Search Results for &quot; FQI2N30TU &quot;

Trans MOSFET N-CH 300V 2.1A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.1A

Current Rating: 2.1A

Drain to Source Breakdown Voltage: 300V

Power Field-Effect Transistor, 2.1A I(D), 300V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.2A

Current Rating: 2.2A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Breakdown Voltage: 300V

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

FQU2N30TU

MOSFET

Obsolete

Continuous Drain Current (ID): 1.7A

Drain to Source Breakdown Voltage: 300V

Drain to Source Resistance: 3.7R

Fall Time: 21ns

3.2A, 300V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

FQI9N30TU

FET N-Channel Single 9A 30V Through Hole

Volume Production

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Search Results for "FQI2N30TU"

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Trans MOSFET N-CH 300V 2.1A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.1A

Current Rating: 2.1A

Drain to Source Breakdown Voltage: 300V

Power Field-Effect Transistor, 2.1A I(D), 300V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 2.2A

Current Rating: 2.2A

Drain to Source Breakdown Voltage: 900V

Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.2A

Current Rating: 3.2A

Drain to Source Breakdown Voltage: 300V

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

FQU2N30TU

MOSFET

Obsolete

Continuous Drain Current (ID): 1.7A

Drain to Source Breakdown Voltage: 300V

Drain to Source Resistance: 3.7R

Fall Time: 21ns

3.2A, 300V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

FQI9N30TU

FET N-Channel Single 9A 30V Through Hole