Search Results for &quot; FQI5N80TU &quot;

Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.8A

Current Rating: 4.8A

Drain to Source Breakdown Voltage: 800V

800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 6.6A

Current Rating: 6.6A

Drain to Source Breakdown Voltage: 800V

800V N-Channel Power MOSFET, 3.9A, 3.6 Ohm, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.9A

Current Rating: 3.9A

Drain to Source Breakdown Voltage: 800V

N-CHANNEL MOSFET 200V 4.5A TO-262-3 Through Hole

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

FQI5N90TU

MOSFET

Obsolete

Continuous Drain Current (ID): 5.4A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 2.3R

Fall Time: 50ns

N-Channel QFET® MOSFET 800V, 6.6A, 1.5Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

ROHS COMPLIANT, I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

4.5A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Transistor, mosfet, n-Channel, 800V V(Br)Dss, 6.6A I(D), to-262Aa Rohs Compliant: Yes

Unknown

Search Results for "FQI5N80TU"

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FQI5N80TU

Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) I2PAK Rail

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.8A

Current Rating: 4.8A

Drain to Source Breakdown Voltage: 800V

800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 6.6A

Current Rating: 6.6A

Drain to Source Breakdown Voltage: 800V

800V N-Channel Power MOSFET, 3.9A, 3.6 Ohm, I2PAK

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 3.9A

Current Rating: 3.9A

Drain to Source Breakdown Voltage: 800V

N-CHANNEL MOSFET 200V 4.5A TO-262-3 Through Hole

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 4.5A

Current Rating: 4.5A

Drain to Source Breakdown Voltage: 200V

FQI5N90TU

MOSFET

Obsolete

Continuous Drain Current (ID): 5.4A

Drain to Source Breakdown Voltage: 900V

Drain to Source Resistance: 2.3R

Fall Time: 50ns

N-Channel QFET® MOSFET 800V, 6.6A, 1.5Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

ROHS COMPLIANT, I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL

I2PAK-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

4.5A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Pin Count: 3

Transistor, mosfet, n-Channel, 800V V(Br)Dss, 6.6A I(D), to-262Aa Rohs Compliant: Yes