N-channel Power MOSFET, 800V Drain-Source Breakdown Voltage, 3.9A Continuous Drain Current, and 3.6 Ohm Max Drain-Source On Resistance. Features include 16ns Turn-On Delay Time, 35ns Fall Time, and 880pF Input Capacitance. This single element MOSFET is housed in a TO-262-3 (I2PAK) package for through-hole mounting. It operates from -55°C to 150°C with a maximum power dissipation of 130W.
PackageTO-262-3
Current Rating3.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI4N80TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3.6R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.2mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 800V |
| Weight | 2.084g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI4N80TU Datasheet
Download the complete datasheet for Onsemi FQI4N80TU to view detailed technical specifications.
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