P-Channel MOSFET -100V, -1A, 1.05R, SOT-223
RIVET PUSH 0.470 ACETAL WHITE
Power Field-Effect Transistor, 0.83A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
MOSFET N-CH 200V 0.85A SOT-223
Power Field-Effect Transistor, 0.83A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
P-Channel MOSFET, -250V, -0.55A, 4Ω, SOT-223, Tape & Reel
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFET, 100V, 1.7A, 350mR, SOT-223, Logic Level
MOSFET N-CH 800V 0.2A SOT-223
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
N-Channel MOSFET, 200V, 850mA, 1.35R, SOT-223, Logic Level
N-Ch MOSFET, 100V, 1.7A, 0.38Ω, 4-Pin D-PAK
EAD Multi-Band Antenna FQTN35144-MR-10, Internal MMCX, SMA, U.FL
N-Ch MOSFET, 600V, 0.2A, 11.5Ω, SOT-223 4L
Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
EMBEDDED ANTENNA DESIGN FQTN35144-MR-16 ANTENNA, PCB, QUAD BAND, MMCX CONN
EAD Multi-Band Antenna FQTN35144-UF-10, Internal U.FL
Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
