P-Channel MOSFET featuring -100V drain-source breakdown voltage and 1A continuous drain current. Offers a low 1.05Ω drain-source on-resistance. Designed for surface mounting in a SOT-223 package, this single-element transistor operates from -55°C to 150°C with a 2W power dissipation. Key switching characteristics include a 9ns turn-on delay and 30ns fall time.
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Onsemi FQT5P10TF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.05R |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.6mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| Series | QFET™ |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -100V |
| Weight | 0.188g |
| Width | 3.56mm |
| RoHS | Compliant |
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