Search Results for &quot; FZ1200R12KF5 &quot;

IGBT Modules IGBT 1200V 1200A

End of Life

Package Quantity: 2

Eupec

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Transferred

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

FZ1200R12KF4NOSA1

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Obsolete

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Obsolete

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.7V

Collector-emitter Voltage-Max: 1.2kV

FZ1200R12KF1

Fuji Power Transistor Module

Unknown

RoHS Compliant: No

Search Results for "FZ1200R12KF5"

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FZ1200R12KF5

IGBT Modules IGBT 1200V 1200A

End of Life

Package Quantity: 2

Eupec

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Transferred

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

FZ1200R12KF4NOSA1

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Obsolete

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,

Obsolete

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.7V

Collector-emitter Voltage-Max: 1.2kV

FZ1200R12KF1

Fuji Power Transistor Module