Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel,
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 38mm |
| Length | 140mm |
| Max Collector Current | 1.2kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 7.8kW |
| Mount | Screw |
| Package Quantity | 2 |
| Power Dissipation | 7.8kW |
| RoHS Compliant | No |
| Width | 130mm |
| RoHS | Not Compliant |
