Power Field-Effect Transistor, 160A I(D), 55V, 0.0029ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
GWM160 Series 55 Vds 2 Mohm 1.2 kW 160 A 3 Phase Full Bridge w/ Trench MOSFET
GWM160-0055P3-SL
