900V 15A N-Channel MOSFET TO-247 340mR
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor,
900V 5.1A N-CH MOSFET TO-247 1.2 Ohm
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
900V 36A N-Ch MOSFET TO-247 120mR RdsOn
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
Power Field-Effect Transistor, 36A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
FIBOX IPW 2819-G INSTRUMENT PROTECTION WINDOW, 11INX7.5IN
Unspecified
INSTRUMENT PROTECTION WINDOW, 11INX7.5IN; For Use With:Front Panel Mounted Meters; Highest NEMA Rating:4X; External Height - Imperial:11; External Width - Imperial:7.5; External Depth:2.8; External Depth - Imperial:2.8
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor
Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
