Search Results for &quot; IRF1018ESLPBF &quot;

N-Channel MOSFET, 60V, 79A, 8.4mR, TO-262

IN-LINE, R-PSIP-T3

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 79A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Infineon

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

LEAD FREE, TO-262, 3 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRF1018ESPBF

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: D2PAK

Continuous Drain Current (ID): 79A

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 8.4MR

IRF1018ESPBF

Infineon

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IRF1018ESLPBF"

Filters

N-Channel MOSFET, 60V, 79A, 8.4mR, TO-262

IN-LINE, R-PSIP-T3

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 79A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Infineon

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

LEAD FREE, TO-262, 3 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRF1018ESPBF

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3