Search Results for &quot; IRF5210STRR &quot;

100V 40A HEXFET MOSFET, 3-Pin TO-263-3 Surface Mount

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-263-3

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 100V

Input Capacitance: 2.7nF

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Transferred

Package/Case: TO-263-3

Continuous Drain Current (ID): 38A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 60MR

Infineon

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRF5210STRRHR

Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R

Obsolete

RoHS Compliant: No

Search Results for "IRF5210STRR"

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IRF5210STRR

100V 40A HEXFET MOSFET, 3-Pin TO-263-3 Surface Mount

SMALL OUTLINE, R-PSSO-G2

Transferred

Package/Case: TO-263-3

Continuous Drain Current (ID): 40A

Drain to Source Voltage (Vdss): 100V

Input Capacitance: 2.7nF

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Transferred

Package/Case: TO-263-3

Continuous Drain Current (ID): 38A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 60MR

Infineon

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRF5210STRRHR

Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R