Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

INTERNATIONAL RECTIFIER IRF7501 Dual MOSFET, Dual N Channel, 2.4 A, 30 V, 135 mohm, 2.7 V
Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
DUAL P CHANNEL MOSFET, -30V, MICRO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V ;RoHS Compliant: No
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8