Search Results for &quot; IRF831 &quot;

MOSFET, DUAL N-CH 30V 9.7A SO8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9.7A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 21.6mR

30V 9.7A N-Channel MOSFET, SOIC-8, -55°C to 175°C, Lead Free

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9.7A

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 15.5MR

Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

ROHS COMPLIANT, SOP-8

Not Recommended

Max Operating Temperature: 175

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

ROHS COMPLIANT, SOP-8

Obsolete

Max Operating Temperature: 175

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Search Results for "IRF831"

Filters

MOSFET, DUAL N-CH 30V 9.7A SO8

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9.7A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 21.6mR

30V 9.7A N-Channel MOSFET, SOIC-8, -55°C to 175°C, Lead Free

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9.7A

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 15.5MR

Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

ROHS COMPLIANT, SOP-8

Not Recommended

Max Operating Temperature: 175

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8