Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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Infineon IRF8313PBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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