Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Power Field-Effect Transistor, 1.3A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line