Search Results for &quot; IRFH7187TRPBF &quot;

75V 14A HEXFET QFN Power MOSFET

Volume Production

Package/Case: QFN

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 75V

Fall Time: 6.5ns

IRFH7185TRPBF

N-CHANNEL HEXFET 100V 19A 3.6W Surface Mount

Volume Production

Continuous Drain Current (ID): 19A

Drain to Source Resistance: 5.2mR

Drain to Source Voltage (Vdss): 100V

Fall Time: 3.9ns

IRFH7787TRPBF

MOSFET, 75V, 68A, 8.0Ohm, 75 nC, PQFN 5x6, TAPE & REEL

Volume Production

Continuous Drain Current (ID): 68A

Gate to Source Voltage (Vgs): 20V

Height: 1.17mm

Input Capacitance: 4.03nF

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Obsolete

Max Operating Temperature: 150

IRFH7188TRPBF

Power Field-Effect Transistor

Transferred

Search Results for "IRFH7187TRPBF"

Filters

75V 14A HEXFET QFN Power MOSFET

Volume Production

Package/Case: QFN

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 75V

Fall Time: 6.5ns

IRFH7185TRPBF

N-CHANNEL HEXFET 100V 19A 3.6W Surface Mount

Volume Production

Continuous Drain Current (ID): 19A

Drain to Source Resistance: 5.2mR

Drain to Source Voltage (Vdss): 100V

Fall Time: 3.9ns

IRFH7787TRPBF

MOSFET, 75V, 68A, 8.0Ohm, 75 nC, PQFN 5x6, TAPE & REEL

Volume Production

Continuous Drain Current (ID): 68A

Gate to Source Voltage (Vgs): 20V

Height: 1.17mm

Input Capacitance: 4.03nF

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Obsolete

Max Operating Temperature: 150

IRFH7188TRPBF

Power Field-Effect Transistor