Search Results for &quot; IRFH8201TRPBF &quot;

MOSFET N-CH 25V 100A PQFN

Volume Production

Continuous Drain Current (ID): 100A

Drain to Source Resistance: 1.6mR

Drain to Source Voltage (Vdss): 25V

Element Configuration: Single

IRFH4201TRPBF

Hexfet Power MOSFET 25V 49A 0.95mR 3.5W Surface Mount

Volume Production

Continuous Drain Current (ID): 49A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 950kR

Fall Time: 19ns

25V 100A Surface Mount Power MOSFET

Volume Production

Continuous Drain Current (ID): 100A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 1.05mR

Drain to Source Voltage (Vdss): 25V

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

Active

Max Operating Temperature: 150

Number of Elements: 1

Search Results for "IRFH8201TRPBF"

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IRFH8201TRPBF

MOSFET N-CH 25V 100A PQFN

Volume Production

Continuous Drain Current (ID): 100A

Drain to Source Resistance: 1.6mR

Drain to Source Voltage (Vdss): 25V

Element Configuration: Single

IRFH4201TRPBF

Hexfet Power MOSFET 25V 49A 0.95mR 3.5W Surface Mount

Volume Production

Continuous Drain Current (ID): 49A

Drain to Source Voltage (Vdss): 25V

Drain-source On Resistance-Max: 950kR

Fall Time: 19ns

25V 100A Surface Mount Power MOSFET

Volume Production

Continuous Drain Current (ID): 100A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 1.05mR

Drain to Source Voltage (Vdss): 25V

Infineon

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET