Search Results for "IRFU320B"

Filters

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Datasheet

IPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-251

IRFU320BTU

Onsemi

MOSFET 400V N-Channel B-FET

Datasheet

Obsolete

Continuous Drain Current (ID): 3.1A

Drain to Source Breakdown Voltage: 400V

Drain to Source Resistance: 1.75R

Fall Time: 35ns

IRFU320BTU

Fairchild

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Datasheet

IPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-251

Search Results for "IRFU320B"

Filters

IRFU320B

Fairchild

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Datasheet

IPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-251

IRFU320BTU

Onsemi

MOSFET 400V N-Channel B-FET

Datasheet

Obsolete

Continuous Drain Current (ID): 3.1A

Drain to Source Breakdown Voltage: 400V

Drain to Source Resistance: 1.75R

Fall Time: 35ns

IRFU320BTU

Fairchild

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Datasheet

IPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-251