Search Results for &quot; IRFW540ATM &quot;

MOSFET N-CH 100V 28A D2PAK

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 28A

Current Rating: 28A

Drain to Source Breakdown Voltage: 100V

MOSFET 100V N-Channel A-FET

Obsolete

Package/Case: TO-263

Continuous Drain Current (ID): 40A

Current Rating: 40A

Drain to Source Breakdown Voltage: 100V

IRLW540ATM

N-CHANNEL Power MOSFET, 100V, 28A, D2PAK, -55°C to 175°C

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 52mR

Fairchild

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFW840ATM

IRFW840ATM

Volume Production

RoHS Compliant: No

IRFW740ATM

Volume Production

RoHS Compliant: No

International Rectifier

IRFW740ATM

Volume Production

IRFW550ATM_NL

Volume Production

Search Results for "IRFW540ATM"

Filters

IRFW540ATM

MOSFET N-CH 100V 28A D2PAK

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 28A

Current Rating: 28A

Drain to Source Breakdown Voltage: 100V

MOSFET 100V N-Channel A-FET

Obsolete

Package/Case: TO-263

Continuous Drain Current (ID): 40A

Current Rating: 40A

Drain to Source Breakdown Voltage: 100V

IRLW540ATM

N-CHANNEL Power MOSFET, 100V, 28A, D2PAK, -55°C to 175°C

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 52mR

Fairchild

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFW840ATM

IRFW840ATM

Volume Production

RoHS Compliant: No

IRFW740ATM

Volume Production

RoHS Compliant: No