Search Results for &quot; IRLHM620TR2PBF &quot;

N-CHANNEL HEXFET MOSFET, 20V, 26A, VQFN Package, Surface Mount

Obsolete

Package/Case: VQFN

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.5mR

Power Field-Effect Transistor,

Active

N-Channel MOSFET, 30V, 21A, 3.5mR, VQFN, Surface Mount

SMALL OUTLINE, S-PDSO-N5

Obsolete

Package/Case: VQFN

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.5mR

MOSFET,N CH,DIODE,20V,26A,PQFN33

Volume Production

Package/Case: VQFN

Continuous Drain Current (ID): 26A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 3.5MR

Power Field-Effect Transistor, 26A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

QFN-8

Active

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor

Obsolete

Search Results for "IRLHM620TR2PBF"

Filters

N-CHANNEL HEXFET MOSFET, 20V, 26A, VQFN Package, Surface Mount

Obsolete

Package/Case: VQFN

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.5mR

Power Field-Effect Transistor,

Active

N-Channel MOSFET, 30V, 21A, 3.5mR, VQFN, Surface Mount

SMALL OUTLINE, S-PDSO-N5

Obsolete

Package/Case: VQFN

Continuous Drain Current (ID): 21A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.5mR

MOSFET,N CH,DIODE,20V,26A,PQFN33

Volume Production

Package/Case: VQFN

Continuous Drain Current (ID): 26A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 3.5MR

Power Field-Effect Transistor, 26A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

QFN-8

Active

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor