Search Results for &quot; IXFL210N30P3 &quot;

300V 108A HiPerFET MOSFET, Through Hole, -55°C to 150°C, RoHS

Volume Production

Continuous Drain Current (ID): 108A

Drain to Source Voltage (Vdss): 300V

Gate to Source Voltage (Vgs): 20V

Height: 26.42mm

MOSFET N-Channel: Power MOSFET w/Fast Diode

Volume Production

Package/Case: SOT-227-4

Continuous Drain Current (ID): 192A

Drain to Source Breakdown Voltage: 300V

Drain to Source Resistance: 14.5mR

Power Field-Effect Transistor, 210A I(D), 300V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 210A

Drain to Source Voltage (Vdss): 300V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,

Active

Search Results for "IXFL210N30P3"

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IXFL210N30P3

300V 108A HiPerFET MOSFET, Through Hole, -55°C to 150°C, RoHS

Volume Production

Continuous Drain Current (ID): 108A

Drain to Source Voltage (Vdss): 300V

Gate to Source Voltage (Vgs): 20V

Height: 26.42mm

MOSFET N-Channel: Power MOSFET w/Fast Diode

Volume Production

Package/Case: SOT-227-4

Continuous Drain Current (ID): 192A

Drain to Source Breakdown Voltage: 300V

Drain to Source Resistance: 14.5mR

Power Field-Effect Transistor, 210A I(D), 300V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 210A

Drain to Source Voltage (Vdss): 300V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,