Search Results for &quot; IXFL82N60P &quot;

N-CHANNEL MOSFET 600V 55A 625W Through Hole 3-Pin ISOPLUS264

ISOPLUS264, 3 PIN

Transferred

Continuous Drain Current (ID): 55A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 80mR

Drain to Source Voltage (Vdss): 600V

Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

600V 72A N-Channel MOSFET, 75mR Rds On, SOT-227-4

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 72A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 750mR

N-CHANNEL MOSFET 600V 82A TO-264-3 Through Hole

PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 82A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 750mR

600V N-Ch MOSFET, 82A, 0.075Ω, 4-Pin

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 82A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFL82N60P"

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N-CHANNEL MOSFET 600V 55A 625W Through Hole 3-Pin ISOPLUS264

ISOPLUS264, 3 PIN

Transferred

Continuous Drain Current (ID): 55A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 80mR

Drain to Source Voltage (Vdss): 600V

Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

600V 72A N-Channel MOSFET, 75mR Rds On, SOT-227-4

PLASTIC, MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 72A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 750mR

N-CHANNEL MOSFET 600V 82A TO-264-3 Through Hole

PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 82A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 750mR

600V N-Ch MOSFET, 82A, 0.075Ω, 4-Pin

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Power Field-Effect Transistor, 82A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN