Search Results for &quot; IXFX34N80 &quot;

800V 34A N-Channel MOSFET, 240mR Rds On, TO-247

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-247-3

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 800V

800V 32A N-Channel MOSFET, 270mR Rds(on), TO-247

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 270mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 190mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 190mR

800V 38A N-CHANNEL HiPerFET MOSFET TO-247-3

PLASTIC, PLUS247-3

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 38A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 220mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247-3

PLASTIC, PLUS247-3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFX34N80"

Filters

IXFX34N80

800V 34A N-Channel MOSFET, 240mR Rds On, TO-247

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-247-3

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 800V

800V 32A N-Channel MOSFET, 270mR Rds(on), TO-247

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 270mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 190mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

PLASTIC, PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 44A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 190mR

800V 38A N-CHANNEL HiPerFET MOSFET TO-247-3

PLASTIC, PLUS247-3

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 38A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 220mR

Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247-3