Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3
1kV 4A N-Channel MOSFET, 3R Rds(on), TO-263
MOSFET N-CH 1000V 4A TO-263
IGBT 1kV 16A 54W TO-263-3 Surface Mount
Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
IGBT 1000V 8A 40W TO220AB
Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
N-Channel MOSFET, 1000V, 4A, 3Ω, TO-263AB
Insulated Gate Bipolar Transistor,
IXFA4N100Q-TR
