Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18