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N-CHANNEL MOSFET 600V 15.8A 130W Through Hole

Volume Production

Capacitance: 1.35E-09F

Continuous Drain Current (ID): 15.8A

Drain to Source Breakdown Voltage: 600V

Drain to Source Resistance: 160mR

Nch 500V<VDSS≤700V

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

TK16J60W,S1VQ(O

MOSFET N-Channel 30V 15.8A 130W Through Hole

Not Recommended for New Design

Continuous Drain Current (ID): 15.8A

Fall Time: 5ns

Gate to Source Voltage (Vgs): 30V

Height: 20mm