Search Results for &quot; KSC2682YSTU &quot;

NPN BJT 180V 100mA 200MHz TO-126 Transistor

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 180V

Collector Emitter Breakdown Voltage: 180V

Collector Emitter Voltage (VCEO): 180V

NPN BJT 300V 200mA 80MHz TO-126 Transistor

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 300V

Collector Emitter Breakdown Voltage: 300V

Collector Emitter Saturation Voltage: 1.5V

KSC2682OSTU

NPN BJT 180V 100mA 200MHz TO-126

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 180V

Collector Emitter Breakdown Voltage: 180V

Collector Emitter Voltage (VCEO): 180V

Fairchild

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

TO-126

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-126

Search Results for "KSC2682YSTU"

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KSC2682YSTU

NPN BJT 180V 100mA 200MHz TO-126 Transistor

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 180V

Collector Emitter Breakdown Voltage: 180V

Collector Emitter Voltage (VCEO): 180V

NPN BJT 300V 200mA 80MHz TO-126 Transistor

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 300V

Collector Emitter Breakdown Voltage: 300V

Collector Emitter Saturation Voltage: 1.5V

KSC2682OSTU

NPN BJT 180V 100mA 200MHz TO-126

Obsolete

Package/Case: TO-126

Collector Base Voltage (VCBO): 180V

Collector Emitter Breakdown Voltage: 180V

Collector Emitter Voltage (VCEO): 180V

Fairchild

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,