RF POWER, FET
RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
RF Power Field-Effect Transistor
FUSE 2A 250V FAST SHORT MRF
FUSE 200MA 250V FAST SHORT MRF
Rotary Switch DP6T, 2P, 100mA, 28V, TH, Solder, Illuminated
RF Small Signal Bipolar Transistor, 1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
RF MOSFET Transistor, N-CH, 65V, 26A, 4-Pin
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 333-04, 6 PIN
RF FET, 2-Element, N-Channel, 4-Pin, UHF
FUSE BOARD MOUNT 2A 250VAC RAD
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
2.4GHz RF Transceiver, SPI, 3.3V, QFN, 625Kbps
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
Receiver Module 155Mbps
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880, CASE 465B-02, 2 PIN
2.4GHz Telecom IC, SPI, QFN, 625Kbps, 3.3V, 0dBm
2.4GHz Telecom IC Module, 250Kbps, SPI, 19dBm Output