Search Results for &quot; MRF8S18120HSR3 &quot;

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Current Rating: 10uA

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

Gain: 18.2dB

Gate to Source Voltage (Vgs): 10V

MRF8S18120HSR5

65V N-CHANNEL MOSFET, 1.81GHz, 72W, Tape and Reel

Obsolete

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

Gain: 18.2dB

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V

FLANGE MOUNT, R-CDFM-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

Search Results for "MRF8S18120HSR3"

Filters

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Current Rating: 10uA

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

Gain: 18.2dB

Gate to Source Voltage (Vgs): 10V

MRF8S18120HSR5

65V N-CHANNEL MOSFET, 1.81GHz, 72W, Tape and Reel

Obsolete

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.81GHz

Gain: 18.2dB

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V