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RF Power Field-Effect Transistor

,

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

Freescale Semiconductor

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-03, 2 PIN

FLANGE MOUNT, R-XDFM-F2

Transferred

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

RF Power Field-Effect Transistor

,

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21dB

RF Power Field-Effect Transistor

,

Obsolete

Drain to Source Breakdown Voltage: 66V

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 20.8dB

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Drain to Source Voltage (Vdss): 66V

Frequency: 880MHz

Gain: 21.2dB

Gate to Source Voltage (Vgs): 12V

FET RF 66V 880MHZ NI-880S

Obsolete

Frequency: 880MHz

Gain: 21dB

Output Power: 58W

Package Quantity: 50