The NXP MRFE6S9200HR3 is a high-frequency N-channel RF transistor with a drain to source breakdown voltage of 66V and a maximum operating frequency of 880MHz. It can handle a maximum output power of 58W and has a gain of 21dB. The transistor is packaged in a halogen-free configuration and is RoHS compliant. It can operate over a temperature range of -65°C to 225°C and is available in a quantity of 250 units per reel. The device is mounted using a screw and has a weight of 0.343346oz.
Sign in to ask questions about the NXP MRFE6S9200HR3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP MRFE6S9200HR3 technical specifications.
| Drain to Source Breakdown Voltage | 66V |
| Drain to Source Voltage (Vdss) | 66V |
| Frequency | 880MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 58W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 58W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 66V |
| Weight | 0.343346oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRFE6S9200HR3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
