Search Results for &quot; NE325S01-T1B &quot;

CEL

N-CHANNEL GaAs FET, 4V Vdss, 90mA ID, 12 GHz f, SO Package

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 90mA

Drain to Source Voltage (Vdss): 4V

Gain: 12.5dB

Renesas

Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R

Volume Production

Drain Current-Max (Abs) (ID): 90mA

Drain Current-Max (ID): 90mA

Max Operating Temperature: 125°C

Polarity/Channel Type: N-CHANNEL

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET,

DISK BUTTON, O-PRDB-G4

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NEC

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN

PLASTIC, S01, 4 PIN

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

NE325S01-T1B-A

Trans JFET N-CH 4V 90mA AlGaAs HJFET T/R

Volume Production

Search Results for "NE325S01-T1B"

Filters

CEL

N-CHANNEL GaAs FET, 4V Vdss, 90mA ID, 12 GHz f, SO Package

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 90mA

Drain to Source Voltage (Vdss): 4V

Gain: 12.5dB

Renesas

Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R

Volume Production

Drain Current-Max (Abs) (ID): 90mA

Drain Current-Max (ID): 90mA

Max Operating Temperature: 125°C

Polarity/Channel Type: N-CHANNEL

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET,

DISK BUTTON, O-PRDB-G4

Obsolete

Continuous Drain Current (ID): 90mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NEC

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN

PLASTIC, S01, 4 PIN

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

NE325S01-T1B-A

Trans JFET N-CH 4V 90mA AlGaAs HJFET T/R

Volume Production