Search Results for &quot; SGW10N60RUFDTM &quot;

IGBT 600V 16A 75W D2PAK

Obsolete

Package/Case: TO-263-3

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.2V

Collector Emitter Voltage (VCEO): 600V

Fairchild

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

SGW10N60RUFTM

IGBT Transistors 600V/10A

Obsolete

Collector-emitter Voltage-Max: 600V

Max Collector Current: 16A

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Search Results for "SGW10N60RUFDTM"

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IGBT 600V 16A 75W D2PAK

Obsolete

Package/Case: TO-263-3

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.2V

Collector Emitter Voltage (VCEO): 600V

Fairchild

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

D2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

SGW10N60RUFTM

IGBT Transistors 600V/10A