The SGW10N60RUFDTM is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 16A and a maximum power dissipation of 75W. It is packaged in a TO-263-3 case and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IGBT features a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2.2V.
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Onsemi SGW10N60RUFDTM technical specifications.
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 10A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| Reverse Recovery Time | 60ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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