Search Results for &quot; SI2302DS,215 &quot;

Trans MOSFET N-CH 20V 2.5A 3-Pin TO-236AB T/R

End of Life

Package/Case: SOT

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 20V

Fall Time: 34ns

SI2302DS,215

N-channel TrenchMOS logic level FET TO-236 3-Pin

MINIATURE, PLASTIC PACKAGE-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

SI2304DS215

N-Channel 30 V 117 mO 0.83 W Enhancement Mode Transistor - SOT-23-3

Not Recommended for New Design

Package/Case: SOT

Continuous Drain Current (ID): 1.7A

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 117MR

SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Nexperia

SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Search Results for "SI2302DS,215"

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SI2302DS215

Trans MOSFET N-CH 20V 2.5A 3-Pin TO-236AB T/R

End of Life

Package/Case: SOT

Continuous Drain Current (ID): 2.5A

Drain to Source Voltage (Vdss): 20V

Fall Time: 34ns

SI2302DS,215

N-channel TrenchMOS logic level FET TO-236 3-Pin

MINIATURE, PLASTIC PACKAGE-3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

JEDEC Package Code: TO-236AB

SI2304DS215

N-Channel 30 V 117 mO 0.83 W Enhancement Mode Transistor - SOT-23-3

Not Recommended for New Design

Package/Case: SOT

Continuous Drain Current (ID): 1.7A

Drain to Source Voltage (Vdss): 30V

Drain-source On Resistance-Max: 117MR

SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Nexperia

SI2304DS - N-channel TrenchMOS intermediate level FET TO-236 3-Pin