Silicon Controlled Rectifier, 1200A I(T)RMS, 550000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, CASE B 11, 4 PIN
Silicon Controlled Rectifier, 1200A I(T)RMS, 550000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, CASE B 11, 4 PIN
Silicon Controlled Rectifier, 1200A I(T)RMS, 550000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AB, HERMETIC SEALED, METAL, CASE B 11, 4 PIN
Thyristor/Diode Discretes; Square plastic case with isolated metal base plate an
SKT551/12E
