Galaxy Microelectronics
1N5817S
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 20V; IAV Max (A): 1A; VFM Max (V): 0.45V; @ IF (A): 1A; IFSM Max (A): 25A; IR Max (uA): 1000uA; @VR (V): 20V; Package: A-405
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Technical Specifications
Galaxy Microelectronics 1N5817S technical specifications.
General
| Diode Type | RECTIFIER DIODE |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 1N5817S Datasheet
Download the complete datasheet for Galaxy Microelectronics 1N5817S to view detailed technical specifications.
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