Galaxy Microelectronics
1N5819
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 1A; VFM Max (V): 0.6V; @ IF (A): 1A; IFSM Max (A): 25A; IR Max (uA): 1000uA; @VR (V): 40V; Package: DO-41
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Technical Specifications
Galaxy Microelectronics 1N5819 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Elements | 1 |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 1N5819 Datasheet
Download the complete datasheet for Galaxy Microelectronics 1N5819 to view detailed technical specifications.
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