The 1N5821 is a silicon rectifier diode with a maximum operating temperature of 125 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage of 30 volts and is packaged in the DO-27 axial package. The diode element is made of silicon and has two terminals. It is a general purpose rectifier diode.
Galaxy Microelectronics 1N5821 technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-27 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
