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GALAXY MICROELECTRONICS

2SC2712

Galaxy Microelectronics

2SC2712

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 0.15A; HFE Min: 70; HFE Max: 700; VCE (V): 6V; IC (mA): 2mA; VCE(SAT) (V): 0.25V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 80 MHz; PTM Max (W): 0.15W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. Bipolar Junction Transistors (BJT)

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Technical Specifications

Galaxy Microelectronics 2SC2712 technical specifications.

General

Max Operating Temperature125
Number of Terminals3
Min Operating Temperature-55
Terminal PositionDUAL
Number of Elements1

Compliance

REACHunknown
Military SpecFalse

Datasheet

Galaxy Microelectronics 2SC2712 Datasheet

Download the complete datasheet for Galaxy Microelectronics 2SC2712 to view detailed technical specifications.

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