Galaxy Microelectronics
2SD1899
Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 400; VCE (V): 2V; IC (mA): 600mA; VCE(SAT) (V): 0.25V; IC (mA)1: 1500mA; IB (mA): 150mA; FT Min (MHz): 120+ MHz; PTM Max (W): 1W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252
Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 400; VCE (V): 2V; IC (mA): 600mA; VCE(SAT) (V): 0.25V; IC (mA)1: 1500mA; IB (mA): 150mA; FT Min (MHz): 120+ MHz; PTM Max (W): 1W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252
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Technical Specifications
Galaxy Microelectronics 2SD1899 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 2SD1899 Datasheet
Download the complete datasheet for Galaxy Microelectronics 2SD1899 to view detailed technical specifications.
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