Galaxy Microelectronics
2SD880
Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 60; HFE Max: 300; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 3000mA; IB (mA): 300mA; FT Min (MHz): 3+ MHz; PTM Max (W): 1.5W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB
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Technical Specifications
Galaxy Microelectronics 2SD880 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics 2SD880 Datasheet
Download the complete datasheet for Galaxy Microelectronics 2SD880 to view detailed technical specifications.
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