NPN general-purpose amplifier transistor in a SOT-23 surface-mount package. It is specified for up to 45 V collector-emitter voltage and 500 mA collector current, with 300 mW power dissipation and 170 MHz transition frequency. The device provides a DC current gain grade of 600 and a collector cutoff current of 100 nA. It operates from -55 °C to +150 °C and is intended for general AF applications. A complementary PNP type BC807 is available in the same family.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Galaxy Microelectronics BC817-40 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Galaxy Microelectronics BC817-40 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
