Galaxy Microelectronics
HER102G
Ultra Fast Recovery Rectifier, VRRM MAX (V): 100V; IAV MAX (A): 1A; VFM MAX (V): 1V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 100V; TRR MAX (NS): 50ns; Package: DO-41
Ultra Fast Recovery Rectifier, VRRM MAX (V): 100V; IAV MAX (A): 1A; VFM MAX (V): 1V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 100V; TRR MAX (NS): 50ns; Package: DO-41
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Technical Specifications
Galaxy Microelectronics HER102G technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Elements | 1 |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics HER102G Datasheet
Download the complete datasheet for Galaxy Microelectronics HER102G to view detailed technical specifications.
No datasheet is available for this part.